SHORT COURSE
SHORT COURSE PROGRAM
Date: June 1 (Sunday) 8:30-16:30
Short Course Chair: Dr. Tatsuya Nishiwaki, Toshiba Electronic Devices & Storage, Japan
200mm SiC Substrate development and 300mm SiC opportunities & challenges
Dr. Chao Gao, SICC, China
Technology for p-GaN gate High-voltage Gallium Nitride Transistors
Mr. Yasuhiro Uemoto, Infineon Technologies, Japan
Overview of Silicon Power Devices: History, Trends and Outlook
Prof. Wataru Saito, Kyushu University, Japan
Recent Requirements and Trends on Power IC Technology
Dr. Sang Gi Lee, DB Hitek, Korea
Chip Embedded Power Package Technologies for AI and Vehicles
Mr. Yoshiaki Aizawa, AOI ELECTRONICS, Japan
Design Automation Technologies (provisional title)
Dr. Tristan Evans, PE-Systems, Germany
AI-assisted Reliability Testing, Modeling, and Condition Monitoring for Power Semiconductor Modules
Prof. Huai Wang, Aalborg University, Denmark