CALL FOR PAPER
MAIN CATEGORIES OF INTEREST INCLUDE:
High Voltage Power Devices
High voltage silicon based discrete devices (>200V) such as SJ-MOSFETs, IGBTs, thyristors and pn-diodes
Low Voltage Power Devices and Power IC Technology
Low voltage silicon based discrete power devices (<200V) and devices for power ICs of all voltage ranges
Power IC Design
Circuit design and demonstration using power IC technology platform
GaN and Compound Materials
GaN and compound semiconductor (e.g., AlN, GaAs) based power devices, technology and integration
SiC and Other Materials
SiC and other materials (e.g., Ga2O3, diamond) based power devices, technology and integration
Module and Packaging Technologies
Module and package technology for discrete power devices and power ICs
PAPER SUBMISSION
- IMPORTANT: ISPSD2025 will change the paper submission process.
- Note that Only 4-page full papers will be accepted. Traditional "Abstract Submission" will NOT be accepted. No late news session.
IMPORTANT DATES
- February 7, 20254-page full paper submission deadline
- March 24, 2025Author notification