High Voltage Devices (HV)

Ayanori Gatto, Mitsubishi Electric, Japan - Category Chair

Karthik Padmanabhan, Alpha and Omega Semiconductor, USA

Umamaheswara Reddy Vemulapati, Hitachi Energy, Switzerland

Yusuke Yamashita, Toyota Central R&D Labs, Japan

Wentao Yang, Huawei Technologies, China

Tanya Trajković, Camutronics, UK

Craig Fisher, Vishay, UK

Ming Qiao, University of Electronic Science and Technology of China, China

Kota Ohi, Fuji Electric, Japan

Low Voltage Devices and Power IC Device Technology (LVT)

Atsushi Sakai, Renesas Electronics, Japan - Category Chair

Tatsuya Nishiwaki, Toshiba Electronic Devices & Storage, Japan

Raffaella Roggero, STMicroelectronics, Italy

Jaehyun Yoo, Samsung Electronics, Korea

Steven Thomas Peake, Nexperia, UK

KwangYoung Ko, DB HiTek, Korea

Tanuj Saxena, onsemi, USA

Kuo-Ming Wu, TSMC, Taiwan

Xin Lin, NXP Semiconductors, USA

Power IC Design (ICD)

Makoto Takamiya, The University of Tokyo, Japan - Category Chair

Jingshu Yu, Intel, USA

Bruno Allard, INSA Lyon, Ampère-lab, France

Christophe Tourniol, STMicroelectronics, France

Siyang Liu, Southeast University, China

Wei-Jia Zhang, Analog Device, USA

Karthik Jayaraman, Renesas Electronics, USA

Leon Wang, Omnivision Semiconductor, China

GaN and Nitride-based Compound Materials: Device and Technology (GaN)

Yasuhiro Uemoto, Infineon Technologies, Japan - Category Chair

Lan Wei, University of Waterloo, Canada

Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany

Akira Nakajima, AIST, Japan

Hiroyuki Handa, Panasonic Holdings, Japan

Benoit Bakeroot, IMEC and Ghent University, Belgium

Tom Chun-Lin Tsai, TSMC, Taiwan

Dong Seup Lee, Texas Instruments, USA

Grace Xing, Cornell University, USA

Na Ren, Zhejiang University, China

Roy K.-Y. Wong, National Tsing Hua University, Taiwan

Hong Zhou, Xidian University, China

SiC and Other Materials: Device and Technology (SiC)

Hiroshi Kono, Toshiba Electronic Devices & Storage, Japan - Category Chair

Jeff Joohyung Kim, Wolfspeed, USA

Song Bai, Nanjing Electronic Device Institute, China

Alexander Bolotnikov, onsemi, USA

Ulrike Grossner, ETH Zurich, Switzerland

Takaaki Tominaga, Mitsubishi Electric, Japan

Rudolf Elpelt, Infineon Technologies AG, Germany

Peter Losee, Qorvo, USA

Woongje Sung, University at Albany, USA

Noriyuki Iwamuro, University of Tsukuba, Japan

Shinsuke Harada, AIST, Japan

Kung-Yen Lee, National Taiwan University, Taiwan

Michele Riccio, University of Naples Federico II, Italy

Cheng-Tyng Yen, Fast SiC Semiconductor, Taiwan

Module and Packaging Technologies: System Integration in Package (PK)

Haruka Shimizu, Hitachi, Japan - Category Chair

Wei-Chung Lo, Industrial Technology Research Institute, Taiwan

Xavier Jorda, IMB-CNM, Spain

Emre Gurpinar, Sikorsky Aircraft, USA

Chris Bailey, Arizona State University, USA

Makoto Shibuya, Texas Instruments, Japan

Stefan Oehling, Semikron-Danfoss, Germany

Elena Mengotti, ABB Research Center, Switzerland